Ga-As wafer:
Galliumarsenide (GaAs) is a compound of Gallium (Ga, 31) and Arsenic (As, 33)-a compound semiconductor generated by reaction of Gr. III-V elements, a direct band gap produces the semiconductor item putting its signature in semiconductor industry. The compound is used extensively for microwave and IR frequency integrated circuits devices. GaAs is actually GaAs3 because Ga is in +3 oxidation state.

Single crystal GaAs can be prepared by well-known industrial crystallization method and is not the topic chosen to discuss here. Rather, methods for producing Thinfilm GaAs will be highlighted here. Other elements from gr. III-V is likely to follow MOCVD or MB epitaial growth to form films of InGaAs or AlGaAs etc. These are:

1. VPE (Vapor Phase epitaxy) 2Ga + 2AsCl3→ 2GaAs + 3Cl2

2. MOCVD, GA (CH3)3+ AsH3→GaAs +3CH4

3. MBE, 4Ga + As4 → 4GaAs

#.Ga-As film:
Bell Lab carried on growing thin film reaction under the name VBE (vacuum chemical epitaxy). First Ga-As film was made by using TMGa with Arsine gas.

TrimethylGa (TMGa) is a volatile compound. Arsine (AsH3) is also a volatile, poisonous gas. Using TriethylGa instead of TrimethylGa (TMGa) removes C better with the formation of ethylene gas as shown with the reaction below. MOCVD is the most advanced deposition

Inorder to form GaAs film, the raw materials are fed into MOCVD, by reacting TMGa with Arsine first. Advantage of using AsH3 in MOCVD is it cleans C in a better way

Though, MOCVD works well and is now a preferred process for making many Gr. III-V films or compounds such as (Ga-As), AlGaAs, InGaP, GaAsP, GaSb, GaInAs). Scientists have replaced poisonous Arsine gas with simple Arsenic metal and fed into the reactor as shown in above reaction method used is named as MBE (Molecular beam epitaxy.

DETAILS:
Growing Ga-As Thinfilm is a monumental task. The whole monolithic junction structure needs to be break down into sub components. Thin-film semiconductor industry expands market from making computer microchip to today’s solar panels. Everyone uses a cell phone now, it contains a semiconductor chip. Those chips actually come from Wafer. Using high-tech equipment various properties of wafers such as i) curvature, ii) temperature, iii) thickness, iv) roughness are maintained to its standard condition.

Need To Know:
1. Wafer: A wafer is a slice of substrate-thin slice of semiconductor material such as c-silicon

2. MOCVD technique is a higher quality deposition technique with advanced tools. MOCVD stands for Metal-Oxygen Chemical Vapor Deposition− is a technique for depositing thin layers of atoms on to a semiconductor wafer.

3. Device fabrication process knowledge: is a requirement to create IC that are present in everyday electrical and electronic devices. It is a multiple sequence of photolithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. For IC, Si along with other compound semiconductors are used with specialized applications.

Inherent Problems with Thin Films:
#. Oxidation of GaAs thin film occurs with the air degrading the performance of the semiconductor. Surface needs to be passivated by depositing compounds such as GaS.

#. Growing large, high quality GaAs wafers and intimately integrating them on silicon or other substrates (such as glass or plastic) is expensive, which restricts their use.

#. Concentrating sunlight on solar panel with larger silicon cells is problematic because a cooling system must be used to conduct away the heat that this generates. This is problematic. Semprius’s company solved the problem by using small cells equipped with lenses. These produce so little heat that they don’t require cooling, which reduce the cost of the cell. For small cell produce, Semprius uses GaAS wafer.

Semprius: Pioneer in the Ga-As semiconductor production industry. A North Carolina based semiconductor industry produce electronic goods for large, utility-scale projects in places such as the American Southwest. The company raised enough money to mass produce its solar panels to generate and deliver 6MW and hopes to produce 30MW in near future.

Semprius’s designed small Ga-As cells, tiny cell sizes produce so little heat that they don’t require cooling, which brings down the cost of the solar cell. A small black square of Ga-As on each cell (see image) is the semiconducting material that keeps costs down by reducing the size of Ga-As film. John Rogers is the lead author of carrying research successfully publishing several authenticate reports in scientific journals. John Rogers see a great deal of potential in the future and the team developed cell design pointed out briefly below:

#Grow the cell on a GAAs wafer

600micrometer Wide, 600micrometer Long, 10micrometer Thick

#Press the stamp on the stack and lift them off quickly.

#Transfer GaAs to another substrate by stamping it in to the surface and peeling the stamp back slowly

#Reuse the wafer to make more cells.

References: 1. http://www.physorg.com/news193557233.html

2. http://rogers.matse.illinois.edu/files/2010/physorggaas.pdf

X-X

ENTERTAINMENT: Watch the video below on metal Gallium (Ga)

http://www.techinsider.io/gallium-safe-metal-liquid-mercury-2016-5

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